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HipPerFET TM Module
N-Channel Enhancement Mode
VMO 580-02F V DSS
I D25
R DS(on)
= 200 V
= 580 A
= 3.8 m ?
D
D
S
G
KS
G
Preliminary Data
MOSFET
KS
S
Features
Symbol
Conditions
Maximum Ratings
? HiPerFET TM technology
- low R DSon
V DSS
V GS
I D25
I D80
I F25
I F80
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
(diode) T C = 25°C
(diode) T C = 80°C
200
±20
580
430
580
430
V
V
A
A
A
A
- dv/dt ruggedness
- fast intrinsic reverse diode
? package
- low inductive current path
- screw connection to high current
main terminals
- use of non interchangeable
connectors for auxiliary terminals
possible
- Kelvin source terminals for easy drive
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
- isolated ceramic base plate
Applications
R DSon
V GS = 10 V; I D = I D80
3.2
3.8 m ?
? converters with high power density for
V GSth
I DSS
V DS = 20 V; I D = 50 mA
V DS = 0.8 ? V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 125°C
2
3
4
2.6
V
mA
mA
- main and auxiliary AC drives of
electric vehicles
- DC drives
- power supplies
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
V GS = ±20 V; V DS = 0 V
V GS = 10 V; V DS = 0.5 ? V DSS ; I D = I D80
V GS = 10 V; V DS = 0.5 ? V DSS ;
I D = I D80 ; R G = 1 ?
2750
500
1350
210
500
900
350
1
μA
nC
nC
nC
ns
ns
ns
ns
V F
t rr
(diode) I F = 300 A; V GS = 0 V
(diode) I F = 300 A; -di/dt = 500 A/μs; V DS = ? V DSS
0.9
300
1.1
V
ns
R thJC
0.05 K/W
R thJS
with heat transfer paste
0.07
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2000 IXYS All rights reserved
1- 2
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